October 2011
FDB8441
N-Channel PowerTrench ? MOSFET
40V, 120A, 2.5m Ω
Features
Typ r DS(on) = 1.9m Ω at V GS = 10V, I D = 80A
Typ Q g(10) = 215nC at V GS = 10V
Low Miller Charge
Low Q rr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Applications
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter / Alternator
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
AD
FREE I
?2011 Fairchild Semiconductor Corporation
FDB8441 Rev.A2
1
www.fairchildsemi.com
相关PDF资料
FDB8442 MOSFET N-CH 40V 80A D2PAK
FDB8443 MOSFET N-CH 40V 120A TO-263AB
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相关代理商/技术参数
FDB8442 功能描述:MOSFET 40V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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FDB8443 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8443_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.0m??
FDB8443_F085 功能描述:MOSFET 40V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB8444_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m??